Evolution of vacancy-related defects upon annealing of ion-implanted germanium
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چکیده
Rights: © 2008 American Physical Society (APS). This is the accepted version of the following article: Slotte, J. & Rummukainen, M. & Tuomisto, Filip & Markevich, V. P. & Peaker, A. R. & Jeynes, C. & Gwilliam, R. M. 2008. Evolution of vacancy-related defects upon annealing of ion-implanted germanium. Phys. Rev. B. Volume 78, Issue 8. 085202/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.78.085202, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.78.085202.
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